STL11N60M2-EP
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likeSTL11N60M2-EP
Brand：ST
Model：STL11N60M2-EP
stock：16347
Store：ShenZhen/Hongkong
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| Installation type | Surface mount |
| packing | TR |
| series | MDmesh™ M2-EP |
| Part status | stop production |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | PowerFlat™(5x6)HV |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 600 V |
| Current at 25 ° C - continuous drain (Id) | 5.5A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | - |
| On resistance (maximum) for different Ids and Vgs | - |
| Vgs (th) (maximum) for different Ids | - |
| Gate charge (Qg) at different Vgs (maximum) | - |
| Vgs (max) | - |
| Input capacitance at different Vds (Ciss) (maximum) | - |
| FET function | - |
| Power dissipation (maximum) | - |
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