NTMFS4C05NT1G
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NTMFS4C05NT1G
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NTMFS4C05NT1G

Brand:ON
Model:NTMFS4C05NT1G
stock:63626
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT,bulk
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 5-DFN(5x6)(8-SOFL)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 11.9A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 3.4 mΩ @ 30A,10V
Vgs (th) (maximum) for different Ids 2.2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 14 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1972 pF @ 15 V
FET function -
Power dissipation (maximum) 770mW(Ta),33W(Tc)
Common problem
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