Installation type | Surface mount |
packing | TR,CT |
series | - |
Part status | On sale |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | D2PAK-7 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | SiCFET(silicon carbide) |
FET Type | N channels |
Drain source voltage (Vdss) | 900 V |
Current at 25 ° C - continuous drain (Id) | 9.8A(Ta),112A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 15V |
On resistance (maximum) for different Ids and Vgs | 28 mΩ @ 60A,15V |
Vgs (th) (maximum) for different Ids | 4.3V @ 20mA |
Gate charge (Qg) at different Vgs (maximum) | 200 nC @ 15 V |
Vgs (max) | +19V,-10V |
Input capacitance at different Vds (Ciss) (maximum) | 4415 pF @ 450 V |
FET function | - |
Power dissipation (maximum) | 3.7W(Ta),477W(Tc) |