NTTFS4C13NTWG
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NTTFS4C13NTWG
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NTTFS4C13NTWG

Brand:ON
Model:NTTFS4C13NTWG
stock:76124
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series -
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-WDFN(3.3x3.3)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 7.2A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 9.4 mΩ @ 30A,10V
Vgs (th) (maximum) for different Ids 2.1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 7.8 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 770 pF @ 15 V
FET function -
Power dissipation (maximum) 780mW(Ta),21.5W(Tc)
Common problem
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