NTR4170NT1G
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NTR4170NT1G
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NTR4170NT1G

Brand:ON
Model:NTR4170NT1G
stock:5499
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥36.00
The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT,bulk
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing SOT-23-3(TO-236)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 2.4A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.5V,10V
On resistance (maximum) for different Ids and Vgs 55 mΩ @ 3.2A,10V
Vgs (th) (maximum) for different Ids 1.4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 4.76 nC @ 4.5 V
Vgs (max) ±12V
Input capacitance at different Vds (Ciss) (maximum) 432 pF @ 15 V
FET function -
Power dissipation (maximum) 480mW(Ta)
Common problem
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