NVJS4151PT1G
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NVJS4151PT1G
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NVJS4151PT1G

Brand:ON
Model:NVJS4151PT1G
stock:92106
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT,bulk
series Automotive, AEC-Q101
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing SC-88/SC70-6/SOT-363
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 3.2A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 1.5V,4.5V
On resistance (maximum) for different Ids and Vgs 67 mΩ @ 2.9A,4.5V
Vgs (th) (maximum) for different Ids 1.2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 10 nC @ 4.5 V
Vgs (max) ±12V
Input capacitance at different Vds (Ciss) (maximum) 850 pF @ 10 V
FET function -
Power dissipation (maximum) 1.2W(Ta)
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