NTD360N80S3Z
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NTD360N80S3Z
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NTD360N80S3Z

Brand:ON
Model:NTD360N80S3Z
stock:93379
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series SuperFET® III
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing D-PAK(TO-252)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 800 V
Current at 25 ° C - continuous drain (Id) 13A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 360mΩ @ 6,5A,10V
Vgs (th) (maximum) for different Ids 3,8V @ 300µA
Gate charge (Qg) at different Vgs (maximum) 25.3 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1143 pF @ 400 V
FET function -
Power dissipation (maximum) 96W(Tc)
Common problem
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