NVBG080N120SC1
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NVBG080N120SC1
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NVBG080N120SC1

Brand:ON
Model:NVBG080N120SC1
stock:15980
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Common problem
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Installation type Surface mount
packing TR,CT
series Automotive, AEC-Q101
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing D2PAK-7
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology SiCFET(silicon carbide)
FET Type N channels
Drain source voltage (Vdss) 1200 V
Current at 25 ° C - continuous drain (Id) 30A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 20V
On resistance (maximum) for different Ids and Vgs 110 mΩ @ 20A,20V
Vgs (th) (maximum) for different Ids 4.3V @ 5mA
Gate charge (Qg) at different Vgs (maximum) 56 nC @ 20 V
Vgs (max) +25V,-15V
Input capacitance at different Vds (Ciss) (maximum) 1154 pF @ 800 V
FET function -
Power dissipation (maximum) 179W(Tc)
Common problem
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