NTS4101PT1G
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NTS4101PT1G
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NTS4101PT1G

Brand:ON
Model:NTS4101PT1G
stock:12913
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥1.04
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR,CT,bulk
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing SC-70-3(SOT323)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 1.37A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.5V,4.5V
On resistance (maximum) for different Ids and Vgs 120 mΩ @ 1A,4.5V
Vgs (th) (maximum) for different Ids 1.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 9 nC @ 4.5 V
Vgs (max) ±8V
Input capacitance at different Vds (Ciss) (maximum) 840 pF @ 20 V
FET function -
Power dissipation (maximum) 329mW(Ta)
Common problem
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