NTMJS1D4N06CLTWG
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NTMJS1D4N06CLTWG
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NTMJS1D4N06CLTWG

Brand:ON
Model:NTMJS1D4N06CLTWG
stock:4081
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series -
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing 8-LFPAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 39A(Ta),262A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 1.3 mΩ @ 50A,10V
Vgs (th) (maximum) for different Ids 2V @ 280µA
Gate charge (Qg) at different Vgs (maximum) 103 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 7430 pF @ 30 V
FET function -
Power dissipation (maximum) 4W(Ta),180W(Tc)
Common problem
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