NTMFS3D6N10MCLT1G
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NTMFS3D6N10MCLT1G
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NTMFS3D6N10MCLT1G

Brand:ON
Model:NTMFS3D6N10MCLT1G
stock:33139
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series -
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing 5-DFN(5x6)(8-SOFL)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 19.5A(Ta),131A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 3.6 mΩ @ 48A,10V
Vgs (th) (maximum) for different Ids 3V @ 270µA
Gate charge (Qg) at different Vgs (maximum) 60 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 4411 pF @ 50 V
FET function -
Power dissipation (maximum) 3W(Ta),136W(Tc)
Common problem
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