NTMFS002P03P8ZT1G
Home
Category
MOSFET
NTMFS002P03P8ZT1G
The pictures are for reference only
like

NTMFS002P03P8ZT1G

Brand:ON
Model:NTMFS002P03P8ZT1G
stock:28810
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 5-DFN(5x6)(8-SOFL)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 40.2A(Ta),263A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 1.4 mΩ @ 23A,10V
Vgs (th) (maximum) for different Ids 3V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 217 nC @ 4.5 V
Vgs (max) ±25V
Input capacitance at different Vds (Ciss) (maximum) 14950 pF @ 15 V
FET function -
Power dissipation (maximum) 3.3W(Ta),138.9W(Tc)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer