NTMTSC1D6N10MCTXG
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NTMTSC1D6N10MCTXG
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NTMTSC1D6N10MCTXG

Brand:ON
Model:NTMTSC1D6N10MCTXG
stock:18404
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount,Wettable wings
packing TR,CT
series -
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing 8-TDFNW(8.3x8.4)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 35A(Ta),267A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) -
On resistance (maximum) for different Ids and Vgs 1.7 mΩ @ 90A,10V
Vgs (th) (maximum) for different Ids 4V @ 650µA
Gate charge (Qg) at different Vgs (maximum) 106 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 7630 pF @ 50 V
FET function -
Power dissipation (maximum) 5.1W(Ta),291W(Tc)
Common problem
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