NVTFWS052P04M8LTAG
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NVTFWS052P04M8LTAG
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NVTFWS052P04M8LTAG

Brand:ON
Model:NVTFWS052P04M8LTAG
stock:92158
Store:ShenZhen/Hongkong
DataSheet: Search
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series Automotive, AEC-Q101
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing 8-WDFN(3.3x3.3)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 40 V
Current at 25 ° C - continuous drain (Id) 4.7A(Ta),13.2A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 69 mΩ @ 5A,10V
Vgs (th) (maximum) for different Ids 2.4V @ 95µA
Gate charge (Qg) at different Vgs (maximum) 6.3 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 424 pF @ 20 V
FET function -
Power dissipation (maximum) 2.9W(Ta),23W(Tc)
Common problem
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