1HN04CH-TL-W
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1HN04CH-TL-W
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1HN04CH-TL-W

Brand:ON
Model:1HN04CH-TL-W
stock:31532
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Surface mount
packing TR,CT
series -
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing 3-CPH
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 270mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4V,10V
On resistance (maximum) for different Ids and Vgs 8 Ω @ 140mA,10V
Vgs (th) (maximum) for different Ids 2.6V @ 100µA
Gate charge (Qg) at different Vgs (maximum) 0.9 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 15 pF @ 20 V
FET function -
Power dissipation (maximum) -
Common problem
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