Installation type | Surface mount |
packing | pallet |
series | - |
Part status | On sale |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | mould |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | SiC(Silicon carbide bonded crystal tube) |
FET Type | N channels |
Drain source voltage (Vdss) | 1200 V |
Current at 25 ° C - continuous drain (Id) | 60A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 20V |
On resistance (maximum) for different Ids and Vgs | 56mΩ @ 35A,20V |
Vgs (th) (maximum) for different Ids | 4,3V @ 10mA |
Gate charge (Qg) at different Vgs (maximum) | 106 nC @ 20 V |
Vgs (max) | +25V,-15V |
Input capacitance at different Vds (Ciss) (maximum) | 1781 pF @ 800 V |
FET function | - |
Power dissipation (maximum) | 348W(Tc) |