NVMFS4C308NWFT1G
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NVMFS4C308NWFT1G
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NVMFS4C308NWFT1G

Brand:ON
Model:NVMFS4C308NWFT1G
stock:40734
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount,Wettable wings
packing TR
series Automotive, AEC-Q101
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing 5-DFNW(4.9x5.9)(8-SOFL-WF)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 17.2A (Ta), 55A (Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 4.8 mΩ @ 30A,10V
Vgs (th) (maximum) for different Ids 2.1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 18.2 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1670 pF @ 15 V
FET function -
Power dissipation (maximum) 3W (Ta), 30.6W (Tc)
Common problem
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