NVMYS2D3N06CTWG
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likeNVMYS2D3N06CTWG
Brand：ON
Model：NVMYS2D3N06CTWG
stock：9475
Store：ShenZhen/Hongkong
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| Installation type | Surface mount |
| packing | TR |
| series | Automotive, AEC-Q101 |
| Part status | On sale |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | LFPAK4(5x6) |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 60 V |
| Current at 25 ° C - continuous drain (Id) | 28.7A (Ta), 171A (Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 2.3 mΩ @ 50A,10V |
| Vgs (th) (maximum) for different Ids | 4V @ 180µA |
| Gate charge (Qg) at different Vgs (maximum) | 46 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 3584 pF @ 25 V |
| FET function | - |
| Power dissipation (maximum) | 3.8W (Ta), 134.4W (Tc) |
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