NTD5C632NLT4G
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NTD5C632NLT4G
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NTD5C632NLT4G

Brand:ON
Model:NTD5C632NLT4G
stock:34084
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series -
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing DPAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 29A(Ta),155A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 2.5 mΩ @ 50A,10V
Vgs (th) (maximum) for different Ids 2.1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 34 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 5700 pF @ 25 V
FET function -
Power dissipation (maximum) 4W(Ta),115W(Tc)
Common problem
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