NVMTS1D0N04CLTXG
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NVMTS1D0N04CLTXG
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NVMTS1D0N04CLTXG

Brand:ON
Model:NVMTS1D0N04CLTXG
stock:63191
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series Automotive, AEC-Q101
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing 8-DFNW(8.3x8.4)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 40 V
Current at 25 ° C - continuous drain (Id) 51.3A(Ta),291A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 1mOhm @ 50A, 10V
Vgs (th) (maximum) for different Ids 3V @ 210µA
Gate charge (Qg) at different Vgs (maximum) 122 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 7408 pF @ 25 V
FET function -
Power dissipation (maximum) 4.7W(Ta),153W(Tc)
Common problem
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