NVMFS5C645NLAFT3G
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NVMFS5C645NLAFT3G
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NVMFS5C645NLAFT3G

Brand:ON
Model:NVMFS5C645NLAFT3G
stock:85682
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series Automotive, AEC-Q101
Part status Not applicable to new design
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing 5-DFN(5x6)(8-SOFL)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 22A(Ta),100A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 4 mΩ @ 50A,10V
Vgs (th) (maximum) for different Ids 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 34 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 2200 pF @ 50 V
FET function -
Power dissipation (maximum) 3.7W(Ta),79W(Tc)
Common problem
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