NVH4L050N65S3F
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NVH4L050N65S3F
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NVH4L050N65S3F

Brand:ON
Model:NVH4L050N65S3F
stock:89242
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Through-Hole
packing pallet
series SuperFET® III, FRFET®
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-247-4L
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 650 V
Current at 25 ° C - continuous drain (Id) 58A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 50 mΩ @ 29A,10V
Vgs (th) (maximum) for different Ids 5V @ 1.7mA
Gate charge (Qg) at different Vgs (maximum) 123.8 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 4855 pF @ 400 V
FET function -
Power dissipation (maximum) 403W(Tc)
Common problem
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