NTMYS3D3N06CLTWG
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Brand：ON
Model：NTMYS3D3N06CLTWG
stock：90711
Store：ShenZhen/Hongkong
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| Installation type | Surface mount |
| packing | TR |
| series | - |
| Part status | On sale |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | LFPAK4(5x6) |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 60 V |
| Current at 25 ° C - continuous drain (Id) | 26A(Ta),133A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 3 mΩ @ 50A,10V |
| Vgs (th) (maximum) for different Ids | 2V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 40.7 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 2880 pF @ 25 V |
| FET function | - |
| Power dissipation (maximum) | 3.9W(Ta),100W(Tc) |
Common problem
Industry trends
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Advantages of Micron memory chips (why micron chips are recommended)
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Toshiba MCU plant forced to stop work due to power outage! Or cause a significant reduction in production capacity
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Memory chip manufacturers collectively "winter"
M391A2K43DB1-CVF Samsung DDR4 2933 ECC 16G server memory module
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