RFD16N05LSM
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RFD16N05LSM
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RFD16N05LSM

Brand:ON
Model:RFD16N05LSM
stock:14921
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing pipe
series -
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-252AA
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 50 V
Current at 25 ° C - continuous drain (Id) 16A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4V,5V
On resistance (maximum) for different Ids and Vgs 47 mΩ @ 16A,5V
Vgs (th) (maximum) for different Ids 2V @ 250mA
Gate charge (Qg) at different Vgs (maximum) 80 nC @ 10 V
Vgs (max) ±10V
Input capacitance at different Vds (Ciss) (maximum) -
FET function -
Power dissipation (maximum) 60W(Tc)
Common problem
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