MMFT2N02ELT1
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MMFT2N02ELT1
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MMFT2N02ELT1

Brand:ON
Model:MMFT2N02ELT1
stock:86977
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing -
series -
Part status stop production
working temperature -
Encapsulation/Housing SOT-223(TO-261)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 1.6A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) -
On resistance (maximum) for different Ids and Vgs 150 mΩ @ 800mA,5V
Vgs (th) (maximum) for different Ids 2V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 20 nC @ 5 V
Vgs (max) -
Input capacitance at different Vds (Ciss) (maximum) 580 pF @ 15 V
FET function -
Power dissipation (maximum) -
Common problem
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