MMFT960T1G
Home
Category
MOSFET
MMFT960T1G
The pictures are for reference only
like

MMFT960T1G

Brand:ON
Model:MMFT960T1G
stock:91675
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series -
Part status stop production
working temperature -65°C ~ 150°C(TJ)
Encapsulation/Housing SOT-223(TO-261)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 300mA(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 1.7 Ω @ 1A,10V
Vgs (th) (maximum) for different Ids 3.5V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 3.2 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 65 pF @ 25 V
FET function -
Power dissipation (maximum) 800mW(Ta)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer