NIF9N05CLT3G
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NIF9N05CLT3G
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NIF9N05CLT3G

Brand:ON
Model:NIF9N05CLT3G
stock:84039
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,bulk
series -
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing SOT-223(TO-261)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 59 V
Current at 25 ° C - continuous drain (Id) 2.6A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 3V,10V
On resistance (maximum) for different Ids and Vgs 125 mΩ @ 2.6A,10V
Vgs (th) (maximum) for different Ids 2.5V @ 100µA
Gate charge (Qg) at different Vgs (maximum) 7 nC @ 4.5 V
Vgs (max) ±15V
Input capacitance at different Vds (Ciss) (maximum) 250 pF @ 35 V
FET function -
Power dissipation (maximum) 1.69W(Ta)
Common problem
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