FDB2670
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FDB2670
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FDB2670

Brand:ON
Model:FDB2670
stock:7349
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series PowerTrench®
Part status stop production
working temperature -65°C ~ 175°C(TJ)
Encapsulation/Housing D²PAK(TO-263)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 200 V
Current at 25 ° C - continuous drain (Id) 19A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 130 mΩ @ 10A,10V
Vgs (th) (maximum) for different Ids 4.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 38 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1320 pF @ 100 V
FET function -
Power dissipation (maximum) 93W(Tc)
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