Installation type | Surface mount |
packing | TR |
series | QFET® |
Part status | stop production |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | D²PAK(TO-263) |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | P channels |
Drain source voltage (Vdss) | 100 V |
Current at 25 ° C - continuous drain (Id) | 4.5A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
On resistance (maximum) for different Ids and Vgs | 1.05 Ω @ 2.25A,10V |
Vgs (th) (maximum) for different Ids | 4V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 8.2 nC @ 10 V |
Vgs (max) | ±30V |
Input capacitance at different Vds (Ciss) (maximum) | 250 pF @ 25 V |
FET function | - |
Power dissipation (maximum) | 3.75W(Ta),40W(Tc) |