NTD60N02RG
Home
Category
MOSFET
NTD60N02RG
The pictures are for reference only
like

NTD60N02RG

Brand:ON
Model:NTD60N02RG
stock:92438
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing pipe
series -
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing DPAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 25 V
Current at 25 ° C - continuous drain (Id) 8.5A(Ta),32A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 10.5 mΩ @ 20A,10V
Vgs (th) (maximum) for different Ids 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 14 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1330 pF @ 20 V
FET function -
Power dissipation (maximum) 1.25W(Ta),58W(Tc)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer