Installation type | Through-Hole |
packing | pipe |
series | - |
Part status | stop production |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | I-PAK |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 30 V |
Current at 25 ° C - continuous drain (Id) | 6.9A(Ta),35A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,11.5V |
On resistance (maximum) for different Ids and Vgs | 15 mΩ @ 30A,10V |
Vgs (th) (maximum) for different Ids | 2.5V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 6.6 nC @ 4.5 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 770 pF @ 12 V |
FET function | - |
Power dissipation (maximum) | 1.26W(Ta),32.6W(Tc) |