NTR0202PLT3G
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NTR0202PLT3G
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NTR0202PLT3G

Brand:ON
Model:NTR0202PLT3G
stock:5438
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Common problem
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Installation type Surface mount
packing TR,bulk
series -
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing SOT-23-3(TO-236)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 400mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 800 mΩ @ 200mA,10V
Vgs (th) (maximum) for different Ids 2.3V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 2.18 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 70 pF @ 5 V
FET function -
Power dissipation (maximum) 225mW(Ta)
Common problem
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