NTS2101PT1
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NTS2101PT1
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NTS2101PT1

Brand:ON
Model:NTS2101PT1
stock:75003
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series -
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing SC-70-3(SOT323)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 8 V
Current at 25 ° C - continuous drain (Id) 1.4A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 1.8V,4.5V
On resistance (maximum) for different Ids and Vgs 100 mΩ @ 1A,4.5V
Vgs (th) (maximum) for different Ids 700mV @ 250µA
Gate charge (Qg) at different Vgs (maximum) 6.4 nC @ 5 V
Vgs (max) ±8V
Input capacitance at different Vds (Ciss) (maximum) 640 pF @ 8 V
FET function -
Power dissipation (maximum) 290mW(Ta)
Common problem
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