NTD3808NT4G
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NTD3808NT4G
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NTD3808NT4G

Brand:ON
Model:NTD3808NT4G
stock:82772
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Common problem
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Installation type Surface mount
packing TR,bulk
series -
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing DPAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 16 V
Current at 25 ° C - continuous drain (Id) 12A(Ta),76A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 5.8 mΩ @ 15A,10V
Vgs (th) (maximum) for different Ids 2.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 21 nC @ 4.5 V
Vgs (max) ±16V
Input capacitance at different Vds (Ciss) (maximum) 1660 pF @ 12 V
FET function -
Power dissipation (maximum) 1.3W(Ta),52W(Tc)
Common problem
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