FDFMA2P853
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FDFMA2P853
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FDFMA2P853

Brand:ON
Model:FDFMA2P853
stock:47174
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Common problem
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Installation type Surface mount
packing TR,CT,bulk
series PowerTrench®
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 6-MicroFET(2x2)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 3A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 1.8V,4.5V
On resistance (maximum) for different Ids and Vgs 120 mΩ @ 3A,4.5V
Vgs (th) (maximum) for different Ids 1.3V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 6 nC @ 4.5 V
Vgs (max) ±8V
Input capacitance at different Vds (Ciss) (maximum) 435 pF @ 10 V
FET function Schottky diode (isolated)
Power dissipation (maximum) 1.4W(Ta)
Common problem
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