ATP102-TL-H
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ATP102-TL-H
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ATP102-TL-H

Brand:ON
Model:ATP102-TL-H
stock:86132
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series -
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing ATPAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 40A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 18.5 mΩ @ 20A,10V
Vgs (th) (maximum) for different Ids -
Gate charge (Qg) at different Vgs (maximum) 34 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1490 pF @ 10 V
FET function -
Power dissipation (maximum) 40W(Tc)
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