BS108ZL1G
Home
Category
MOSFET
BS108ZL1G
The pictures are for reference only
like

BS108ZL1G

Brand:ON
Model:BS108ZL1G
stock:94340
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Through-Hole
packing CT,TB
series -
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-92(TO-226)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 200 V
Current at 25 ° C - continuous drain (Id) 250mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 2V,2.8V
On resistance (maximum) for different Ids and Vgs 8 Ω @ 100mA,2.8V
Vgs (th) (maximum) for different Ids 1.5V @ 1mA
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 150 pF @ 25 V
FET function -
Power dissipation (maximum) 350mW(Ta)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer