NTMFS4854NST1G
Home
Category
MOSFET
NTMFS4854NST1G
The pictures are for reference only
like

NTMFS4854NST1G

Brand:ON
Model:NTMFS4854NST1G
stock:74997
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR
series SENSEFET®
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing SO-8FL
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 25 V
Current at 25 ° C - continuous drain (Id) 15.2A(Ta),149A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 3.2V,10V
On resistance (maximum) for different Ids and Vgs 2.5 mΩ @ 15A,10V
Vgs (th) (maximum) for different Ids 2.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 85 nC @ 11.5 V
Vgs (max) ±16V
Input capacitance at different Vds (Ciss) (maximum) 4830 pF @ 12 V
FET function -
Power dissipation (maximum) 900mW(Ta),86.2W(Tc)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer