Installation type | Surface mount |
packing | TR |
series | - |
Part status | stop production |
working temperature | 150°C(TJ) |
Encapsulation/Housing | SC-59-3/CP3 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 50 V |
Current at 25 ° C - continuous drain (Id) | 100mA(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 1.5V,4V |
On resistance (maximum) for different Ids and Vgs | 7.8 Ω @ 50mA,4V |
Vgs (th) (maximum) for different Ids | - |
Gate charge (Qg) at different Vgs (maximum) | 1.57 nC @ 10 V |
Vgs (max) | ±10V |
Input capacitance at different Vds (Ciss) (maximum) | 6.6 pF @ 10 V |
FET function | - |
Power dissipation (maximum) | 250mW(Ta) |