NDFPD1N150CG
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NDFPD1N150CG
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NDFPD1N150CG

Brand:ON
Model:NDFPD1N150CG
stock:59972
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Through-Hole
packing bulk,pipe
series -
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing TO-220-3
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 1500 V
Current at 25 ° C - continuous drain (Id) 100mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 150 Ω @ 50mA,10V
Vgs (th) (maximum) for different Ids -
Gate charge (Qg) at different Vgs (maximum) 4.2 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 80 pF @ 30 V
FET function -
Power dissipation (maximum) 2W(Ta),20W(Tc)
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