2SJ661-1E
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like2SJ661-1E
Brand：ON
Model：2SJ661-1E
stock：51217
Store：ShenZhen/Hongkong
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| Installation type | Through-Hole |
| packing | bulk,pipe |
| series | - |
| Part status | stop production |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | TO-262-3 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 60 V |
| Current at 25 ° C - continuous drain (Id) | 38A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4V,10V |
| On resistance (maximum) for different Ids and Vgs | 39 mΩ @ 19A,10V |
| Vgs (th) (maximum) for different Ids | - |
| Gate charge (Qg) at different Vgs (maximum) | 80 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 4360 pF @ 20 V |
| FET function | - |
| Power dissipation (maximum) | 1.65W(Ta),65W(Tc) |
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