NTP8G202NG
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NTP8G202NG
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NTP8G202NG

Brand:ON
Model:NTP8G202NG
stock:23479
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Through-Hole
packing pipe
series -
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-220
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology GaNFET(Cascode gallium nitrideFET)
FET Type N channels
Drain source voltage (Vdss) 600 V
Current at 25 ° C - continuous drain (Id) 9A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 8V
On resistance (maximum) for different Ids and Vgs 350 mΩ @ 5.5A,8V
Vgs (th) (maximum) for different Ids 2.6V @ 500µA
Gate charge (Qg) at different Vgs (maximum) 9.3 nC @ 4.5 V
Vgs (max) ±18V
Input capacitance at different Vds (Ciss) (maximum) 760 pF @ 400 V
FET function -
Power dissipation (maximum) 65W(Tc)
Common problem
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