Installation type | Through-Hole |
packing | bulk |
series | - |
Part status | stop production |
working temperature | 150°C(TA) |
Encapsulation/Housing | TO-3P-3L |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 600 V |
Current at 25 ° C - continuous drain (Id) | 17A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
On resistance (maximum) for different Ids and Vgs | 610 mΩ @ 7A,10V |
Vgs (th) (maximum) for different Ids | - |
Gate charge (Qg) at different Vgs (maximum) | 46 nC @ 10 V |
Vgs (max) | ±30V |
Input capacitance at different Vds (Ciss) (maximum) | 1200 pF @ 30 V |
FET function | - |
Power dissipation (maximum) | 2.5W(Ta),170W(Tc) |