ATP101-TL-HX
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ATP101-TL-HX
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ATP101-TL-HX

Brand:ON
Model:ATP101-TL-HX
stock:93041
Store:ShenZhen/Hongkong
DataSheet: Search
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series -
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing ATPAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 25A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 30 mΩ @ 13A,10V
Vgs (th) (maximum) for different Ids -
Gate charge (Qg) at different Vgs (maximum) 18.5 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 875 pF @ 10 V
FET function -
Power dissipation (maximum) 30W(Tc)
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