NTMFS4C09NBT3G
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NTMFS4C09NBT3G
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NTMFS4C09NBT3G

Brand:ON
Model:NTMFS4C09NBT3G
stock:13703
Store:ShenZhen/Hongkong
DataSheet: Search
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing -
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) -
Drive voltage (maximum RdsOn, minimum RdsOn) -
On resistance (maximum) for different Ids and Vgs -
Vgs (th) (maximum) for different Ids -
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) -
Input capacitance at different Vds (Ciss) (maximum) 1252 pF @ 15 V
FET function -
Power dissipation (maximum) 760mW(Ta)
Common problem
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