MCH3376-TL-W
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MCH3376-TL-W
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MCH3376-TL-W

Brand:ON
Model:MCH3376-TL-W
stock:95594
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR,CT,bulk
series -
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing 3-MCPH
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 1.5A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 1.8V,4.5V
On resistance (maximum) for different Ids and Vgs 241 mΩ @ 750mA,4.5V
Vgs (th) (maximum) for different Ids 1.4V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 1.7 nC @ 4.5 V
Vgs (max) ±10V
Input capacitance at different Vds (Ciss) (maximum) 120 pF @ 10 V
FET function -
Power dissipation (maximum) 800mW(Ta)
Common problem
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