NVATS5A112PLZT4G
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likeNVATS5A112PLZT4G
Brand：ON
Model：NVATS5A112PLZT4G
stock：85075
Store：ShenZhen/Hongkong
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| Installation type | Surface mount |
| packing | TR,CT,bulk |
| series | Automotive, AEC-Q101 |
| Part status | stop production |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | DPAK/ATPAK |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 60 V |
| Current at 25 ° C - continuous drain (Id) | 27A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4V,10V |
| On resistance (maximum) for different Ids and Vgs | 43 mΩ @ 13A,10V |
| Vgs (th) (maximum) for different Ids | 2.6V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 33.5 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 1450 pF @ 20 V |
| FET function | - |
| Power dissipation (maximum) | 48W(Tc) |
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