BVSS84LT3G
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BVSS84LT3G
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BVSS84LT3G

Brand:ON
Model:BVSS84LT3G
stock:13060
Store:ShenZhen/Hongkong
DataSheet: Search
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series Automotive, AEC-Q101
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing SOT-23-3(TO-236)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 50 V
Current at 25 ° C - continuous drain (Id) 130mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 5V
On resistance (maximum) for different Ids and Vgs 10 Ω @ 100mA,5V
Vgs (th) (maximum) for different Ids 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 2.2 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 36 pF @ 5 V
FET function -
Power dissipation (maximum) 225mW(Ta)
Common problem
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