FDD3860-G
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FDD3860-G
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FDD3860-G

Brand:ON
Model:FDD3860-G
stock:10675
Store:ShenZhen/Hongkong
DataSheet: Search
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series PowerTrench®
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing TO-252,(D-Pak)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 6.2A(Ta),29A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 36 mΩ @ 5.9A,10V
Vgs (th) (maximum) for different Ids 4.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 31 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1740 pF @ 50 V
FET function -
Power dissipation (maximum) 3.75W(Ta),83W(Tc)
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