PMFPB6532UP,115
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PMFPB6532UP,115
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PMFPB6532UP,115

Brand:NXP
Model:PMFPB6532UP,115
stock:18513
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series -
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing 6-HUSON(2x2)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 3.5A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 1.8V,4.5V
On resistance (maximum) for different Ids and Vgs 70 mΩ @ 1A,4.5V
Vgs (th) (maximum) for different Ids 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 6 nC @ 4.5 V
Vgs (max) ±8V
Input capacitance at different Vds (Ciss) (maximum) 380 pF @ 10 V
FET function Schottky diode (isolated)
Power dissipation (maximum) 520mW(Ta),8.3W(Tc)
Common problem
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